SI8439DB-T1-E1【PDF 2/11 页】MOSFET P-CH 8V D-S MICROFOOT

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Si8439DB

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient a, b

Maximum Junction-to-Ambient c, d

t=5s

t=5s

R thJA

R thJA

35

85

45

110

°C/W

Notes:

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Maximum under steady state conditions is 85 °C/W.

c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

d. Maximum under steady state conditions is 175 °C/W.

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

? V DS /T J

? V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

-8

-3

2.5

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 0.4

- 0.8

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 5 V

V DS = - 8 V, V GS = 0 V

V DS = - 8 V, V GS = 0 V, T J = 70 °C

V DS ?? - 5 V, V GS = - 4.5 V

V GS = - 4.5 V, I D = - 1.5 A

V GS = - 2.5 V, I D = - 1 A

-5

0.020

0.023

± 100

-1

- 10

0.025

0.030

nA

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = - 1.8 V, I D = - 1 A

0.030

0.037

?

V GS = - 1.5 V, I D = - 1 A

V GS = - 1.2 V, I D = - 0.5 A

0.036

0.070

0.061

0.125

Forward Transconductance a

g fs

V DS = - 4V, I D = - 1.5 A

14

S

Dynamic b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Q g

Q gs

Q gd

R g

t d(on)

t r

t d(off)

t f

V DS = - 4 V, V GS = - 4.5 V,

I D = - 1.5 A

V GS = - 0.1 V, f = 1 MHz

V DD = - 4 V, R L = 2.7 ?

I D ? - 1.5 A, V GEN = - 4.5 V, R g = 1 ?

33

3.5

7.2

27

30

25

330

210

50

60

50

660

420

nC

?

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

Current

Pulse Diode Forward Current

I S

I SM

T A = 25 °C

- 2.3 c

- 25

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 1.5 A, V GS = 0 V

I F = - 1.5 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.7

365

1.2

125

240

- 1.2

730

2.3

V

ns

μC

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

For technical questions, contact: pmostechsupport@vishay.com

Document Number: 63839

S13-1703-Rev. B, 29-Jul-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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